Datasheet > NVTYS007N04CTWG

NVTYS007N04CTWG

更新时间： 2023-09-03 20:40:20

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	327K
描述
MOSFET – Power, Single, N-Channel, 40 V, 8.6 mΩ, 49 A

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NVTYS007N04CTWG 数据手册

NVTYS007N04C

TYPICAL CHARACTERISTICS

= 10 V to 7 V

= 3 V

6.0 V

T = 25°C

5.0 V

4.0 V

T = 125°C

T = −55°C

3.0

3.5

4.0

4.5

5.0

5.5

6.0

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

T = 25°C

= 15 A

= 10 V

6.0 6.5

7.0

7.5

8.0

8.5

9.0

9.5

10.0

10 20

90 100

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

100K

10K

2.0

1.8

1.6

1.4

1.2

1.0

= 10 V

= 15 A

T = 175°C

T = 150°C

T = 125°C

T = 85°C

100

0.8

T = 25°C

0.6

0.4

0.1

−50 −25

75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

www.onsemi.com

1 2 345 6 7

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