Datasheet > NVTYS007N04CTWG

NVTYS007N04CTWG

更新时间： 2023-09-03 20:40:20

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	327K
描述
MOSFET – Power, Single, N-Channel, 40 V, 8.6 mΩ, 49 A

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NVTYS007N04CTWG 数据手册

NVTYS007N04C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current

= 0 V, I = 250 mA

(BR)DSS

T = 25°C

DSS

= 0 V,

= 40 V

T = 125°C

250

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

= 0 V, V = 20 V

GSS

= V , I = 30 mA

2.5

3.5

8.6

GS(TH)

Drain−to−Source On Resistance

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

= 10 V, I = 15 A

7.2

DS(on)

= 5 V, I = 15 A

DS D

674

338

iss

= 0 V, f = 1.0 MHz,

Output Capacitance

oss

= 25 V

Reverse Transfer Capacitance

Threshold Gate Charge

rss

1.9

3.1

2.4

G(TH)

Gate−to−Source Charge

Gate−to−Drain Charge

= 10 V, V = 32 V, I = 15 A

DS D

Total Gate Charge

= 10 V, V = 32 V, I = 15 A

G(TOT)

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time

d(on)

2.4

3.2

= 10 V, V = 32 V,

= 15 A, R = 2.5 W

Turn−Off Delay Time

Fall Time

d(off)

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.84

0.71

1.2

= 0 V,

= 15 A

T = 125°C

Reverse Recovery Time

Charge Time

= 0 V, dl /dt = 100 A/ms,

= 15 A

Discharge Time

Reverse Recovery Charge

6.3

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

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