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NVTYS007N04CTWG PDF预览

NVTYS007N04CTWG

更新时间: 2023-09-03 20:40:20
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 327K
描述
MOSFET – Power, Single, N-Channel, 40 V, 8.6 mΩ, 49 A

NVTYS007N04CTWG 数据手册

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MOSFET – Power, Single  
N-Channel  
40 V, 8.6 mW, 49 A  
NVTYS007N04C  
Features  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
www.onsemi.com  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Capacitance to Minimize Driver Losses  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
40 V  
8.6 mW @ 10 V  
49 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
NChannel  
D (5 8)  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
49  
A
C
D
q
JC  
T
C
35  
(Notes 1, 2, 3, 4)  
G (4)  
Steady  
State  
Power Dissipation  
T
C
P
38  
W
A
D
R
(Notes 1, 2, 3)  
q
JC  
S (1, 2, 3)  
T
C
= 100°C  
19  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
14  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
10  
(Notes 1, 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.1  
1.5  
197  
W
D
R
(Notes 1, 3)  
q
JA  
007N  
04C  
AYWZZ  
T = 100°C  
A
LFPAK8  
3.3x3.3  
CASE 760AD  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
007N04C = Specific Device Code  
Source Current (Body Diode)  
I
31  
86  
A
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 2.9 A)  
L(pk)  
= Assembly Lot Code  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
4
Unit  
JunctiontoCase Steady State (Note 3)  
JunctiontoAmbient Steady State (Note 3)  
R
°C/W  
q
JC  
R
48.6  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD5112 for packages in which substantially  
less than 100% of the heat flows to single case surface.  
2
3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2021 Rev. 0  
NVTYS007N04C/D  
 

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