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NVMYS005N10MCLTWG PDF预览

NVMYS005N10MCLTWG

更新时间: 2024-11-22 11:13:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 221K
描述
MOSFET – Power, Single N-Channel 100 V, 5.1 mΩ, 108 A

NVMYS005N10MCLTWG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single  
N-Channel  
100 V, 5.1 mW, 108 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
5.1 mW @ 10 V  
7.1 mW @ 4.5 V  
100 V  
108 A  
NVMYS005N10MCL  
D (5)  
Features  
Small Footprint (5x6 mm) for Compact Design  
G (4)  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free, Beryllium Free  
and are RoHS Compliant  
S (1,2,3)  
NCHANNEL MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
MARKING  
DIAGRAM  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
100  
20  
Unit  
V
D
V
DSS  
GatetoSource Voltage  
V
GS  
V
005N10  
MCL  
AWLYW  
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
108  
76  
A
C
D
LFPAK4  
CASE 760AB  
Current R  
(Note 1)  
q
JC  
T
C
Steady  
State  
1
Power Dissipation  
(Note 1)  
T
C
P
131  
65  
W
A
D
S
S
S
G
R
q
JC  
T
C
= 100°C  
005N10MCL = Specific Device Code  
A
= Assembly Location  
= Wafer Lot  
Continuous Drain  
Current R  
T = 25°C  
I
18.4  
13.0  
3.8  
A
D
WL  
Y
q
JA  
T = 100°C  
A
(Notes 1, 2)  
= Year  
Steady  
State  
W
= Work Week  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
1.9  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
736  
A
A
p
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
100  
365  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 6.5 A)  
L(pk)  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Value  
1.15  
40  
Unit  
JunctiontoCase Steady State (Note 1)  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using 1 in pad size, 2 oz. Cu pad.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
June, 2022 Rev. 1  
NVMYS005N10MCL/D  
 

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