Datasheet > NUP1301

NUP1301

更新时间： 2024-09-17 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		电视
页数	文件大小	规格书
3页	187K
描述
ESD/TVS 管

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数据手册

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NUP1301 数据手册

NUP1301

Low Capacitance Diode

a Single Data Line

Array for ESD Protection in

NUP1301 is a MicroIntegration device designed to provide

protection for sensitive components from possible harmful

electrical transients; for example, ESD (electrostatic discharge).

SOT−23

CASE 318

STYLE 11

Features

• Low Capacitance (0.9 pF Maximum)

• Single Package Integration Design

• Provides ESD Protection for JEDEC Standards JESD22

ANODE

CATHODE

Machine Model = Class C

Human Body Model = Class 3B

• Protection for IEC61000−4−2 (Level 4)

8.0 kV (Contact)

CATHODE/ANODE

Applications

15 kV (Air)

• T1/E1 Secondary IC Protection

• T3/E3 Secondary IC Protection

• HDSL, IDSL Secondary IC Protection

• Video Line Protection

• Ensures Data Line Speed and Integrity

• Fewer Components and Less Board Space

• Direct the Transient to Either Positive Side or to the Ground

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• Microcontroller Input Protection

• Base Stations

• Pb−Free Package is Available

• I C Bus Protection

MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

mAdc

Forward Current

215

500

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

FM(surge)

RRM

Average Rectified Forward Current (Note 1)

(averaged over any 20 ms period)

F(AV)

715

450

Repetitive Peak Forward Current

FRM

Non−Repetitive Peak Forward Current

FSM

t = 1.0 ms

t = 1.0 S

2.0

1.0

0.5

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

www.umw-ic.com

友台半导体有限公司

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