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NUP1301ML3T1G PDF预览

NUP1301ML3T1G

更新时间： 2024-11-06 03:45:47
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管光电二极管PC局域网
页数 文件大小 规格书
4页 36K
描述
Low Capacitance Diode Array for ESD Protection in a Single Data Line

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中文翻译

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NUP1301ML3T1G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：SOT-23包装说明：R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：7 weeks风险等级：1.33
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：226921Samacsys Pin Count：3
Samacsys Part Category：Integrated CircuitSamacsys Package Category：SOT23 (3-Pin)
Samacsys Footprint Name：SOT-23 (TO-236) CASE 318-08Samacsys Released Date：2015-08-31 16:43:24
Is Samacsys：N最小击穿电压：70 V
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE最大正向电压 (VF)：0.715 V
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：0.5 A元件数量：2
端子数量：3最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：0.715 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：70 V子类别：Rectifier Diodes
表面贴装：YES技术：AVALANCHE
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

NUP1301ML3T1G 数据手册

 浏览型号NUP1301ML3T1G的Datasheet PDF文件第2页浏览型号NUP1301ML3T1G的Datasheet PDF文件第3页浏览型号NUP1301ML3T1G的Datasheet PDF文件第4页 
NUP1301ML3T1  
Low Capacitance Diode  
Array for ESD Protection in  
a Single Data Line  
NUP1301ML3T1 is a MicroIntegration device designed to  
provide protection for sensitive components from possible harmful  
electrical transients; for example, ESD (electrostatic discharge).  
http://onsemi.com  
Features  
ANODE  
CATHODE  
2
• Low Capacitance (0.9 pF Maximum)  
• Single Package Integration Design  
1
3
• Provides ESD Protection for JEDEC Standards JESD22  
Machine Model = Class C  
CATHODE/ANODE  
Human Body Model = Class 3B  
• Protection for IEC61000−4−2 (Level 4)  
8.0 kV (Contact)  
3
15 kV (Air)  
1
• Ensures Data Line Speed and Integrity  
2
• Fewer Components and Less Board Space  
• Direct the Transient to Either Positive Side or to the Ground  
• Pb−Free Package is Available  
SOT−23  
CASE 318  
STYLE 11  
Applications  
MARKING DIAGRAM  
• T1/E1 Secondary IC Protection  
• T3/E3 Secondary IC Protection  
• HDSL, IDSL Secondary IC Protection  
• Video Line Protection  
53 M  
1
• Microcontroller Input Protection  
• Base Stations  
• I C Bus Protection  
53 = Device Code  
M
= Date Code  
2
ORDERING INFORMATION  
MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)  
J
†
Device  
NUP1301ML3T1  
Package  
Shipping  
Rating  
Symbol  
Value  
70  
Unit  
Vdc  
mAdc  
mAdc  
V
Reverse Voltage  
Forward Current  
V
R
SOT−23 3000 / Tape & Reel  
I
F
215  
500  
70  
NUP1301ML3T1G SOT−23 3000 / Tape & Reel  
(Pb−Free)  
Peak Forward Surge Current  
I
FM(surge)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Repetitive Peak Reverse Voltage  
V
I
RRM  
Average Rectified Forward  
Current (Note 1)  
715  
mA  
F(AV)  
(averaged over any 20 ms period)  
Repetitive Peak Forward Current  
I
450  
mA  
A
FRM  
Non−Repetitive Peak Forward Current  
I
FSM  
t = 1.0 ms  
t = 1.0 ms  
t = 1.0 S  
2.0  
1.0  
0.5  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 4  
NUP1301ML3T1/D  
 
1234

中文翻译

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NUP1301ML3T1G 替代型号

型号 品牌 替代类型 描述 数据表
NUP1301ML3T1 ONSEMI

完全替代

 Low Capacitance Diode Array for ESD Protection in a Single Data Line
TPD2E009DBZR TI

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