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NTMFS4982NFT3G

更新时间： 2024-12-01 01:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 126K
描述
Single N−Channel Power MOSFET

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NTMFS4982NFT3G 数据手册

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NTMFS4982NF  
Power MOSFET  
30 V, 207 A, Single N−Channel, SO−8 FL  
Features  
• Integrated Schottky Diode  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Applications  
• Server, Netcom, POL  
1.3 mW @ 10 V  
1.9 mW @ 4.5 V  
30 V  
207 A  
• Synchronous Rectification for DC−DC Converters  
• Low Side Switching  
• High Performance Applications  
N−CHANNEL MOSFET  
(5, 6)  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value Unit  
V
DSS  
30  
20  
36  
V
V
A
G
Gate−to−Source Voltage  
V
GS  
(4)  
Continuous Drain  
Current R  
I
D
T = 25°C  
A
q
JA  
T = 85°C  
A
26  
(Note 1)  
Power Dissipation  
(Note 1)  
S
(1, 2, 3)  
T = 25°C  
A
P
2.7  
W
A
D
D
D
D
R
q
JA  
MARKING  
DIAGRAM  
Continuous Drain  
I
D
T = 25°C  
A
60  
43  
Current R  
10 sec  
v
q
JA  
T = 85°C  
A
D
S
S
S
G
D
D
Power Dissipation  
T = 25°C  
A
P
I
7.4  
W
A
1
4982NF  
AYWZZ  
R
t v 10 sec  
q
JA,  
Steady  
State  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Continuous Drain  
Current R  
T = 25°C  
A
26.5  
19  
D
q
JA  
T = 85°C  
A
D
(Note 2)  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
1.5  
W
A
A
Y
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
R
q
JA  
Continuous Drain  
Current R  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
207  
149  
89.3  
D
W
ZZ  
q
JC  
(Note 1)  
Power Dissipation  
(Note 1)  
P
W
R
q
JC  
Pulsed Drain Current t =10ms  
T = 25°C  
I
350  
100  
A
A
ORDERING INFORMATION  
p
A
DM  
I
Dmaxpkg  
Current limited by package  
T = 25°C  
A
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
T ,  
−55 to  
+150  
°C  
J
NTMFS4982NFT1G  
SO−8FL  
1500 /  
T
STG  
(Pb−Free)  
Tape & Reel  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
S
54  
6
A
NTMFS4982NFT3G  
SO−8FL  
5000 /  
dV/dt  
EAS  
V/ns  
mJ  
(Pb−Free)  
Tape & Reel  
Single Pulse Drain−to−Source Avalanche  
125  
Energy (V = 50 V, V = 10 V, I = 50 A ,  
DD  
GS  
L
pk  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
L = 0.1 mH, R = 25 W)  
G
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
February, 2014 − Rev. 3  
NTMFS4982NF/D  
1234567

中文翻译

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NTMFS4982NFT3G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFS4982NFT1G ONSEMI

完全替代

 Single N−Channel Power MOSFET
FDMC7660DC ONSEMI

功能相似

 N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，
FDMC7660DC FAIRCHILD

功能相似

 DUAL COOL™ PACKAGE POWERTRENCH® MOSFETs

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