Datasheet > NTMFS4C022N

NTMFS4C022N

更新时间： 2024-11-25 01:11:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	83K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMFS4C022N 数据手册

NTMFS4C022N

Power MOSFET

30 V, 2.1 mW, 136 A, Single N−Channel,

SO−8FL

Features

• Small Footprint (5x6 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(BR)DSS

DS(ON)

Compliant

1.7 mW @ 10 V

2.4 mW @ 4.5 V

30 V

136 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

D (5,6)

Gate−to−Source Voltage

Continuous Drain Cur-

"20

136

= 25°C

rent R

(Notes 1, 3)

Steady

State

G (4)

Power Dissipation R

(Notes 1, 3)

Continuous Drain Cur-

rent R (Notes 1, 2, 3)

T = 25°C

S (1,2,3)

N−CHANNEL MOSFET

Steady

State

Power Dissipation R

(Notes 1, 2, 3)

T = 25°C

3.1

MARKING

DIAGRAM

Pulsed Drain Current

T = 25°C, t = 10 ms

900

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

stg

Source Current (Body Diode)

4C022N

AYWZZ

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

Single Pulse Drain−to−Source Avalanche

549

Energy (I

= 11 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

ORDERING INFORMATION

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

1.95

°C/W

†

Device

Package

Shipping

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

NTMFS4C022NT1G

SO−8FL

(Pb−Free)

1500 /

Tape & Reel

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

NTMFS4C022NT3G

SO−8FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

June, 2016 − Rev. 0

NTMFS4C022N/D

12 3 4 5 6

中文翻译

下载PDF

与NTMFS4C022N相关器件

型号	品牌	获取价格	描述	数据表
NTMFS4C022NT1G	ONSEMI	获取价格	Power MOSFET
NTMFS4C022NT3G	ONSEMI	获取价格	Power MOSFET
NTMFS4C024N	ONSEMI	获取价格	Power MOSFET
NTMFS4C024NT1G	ONSEMI	获取价格	Power MOSFET
NTMFS4C024NT3G	ONSEMI	获取价格	Power MOSFET
NTMFS4C025N	ONSEMI	获取价格	Power MOSFET
NTMFS4C025NT1G	ONSEMI	获取价格	Power MOSFET
NTMFS4C025NT3G	ONSEMI	获取价格	Power MOSFET
NTMFS4C027N	ONSEMI	获取价格	Power MOSFET
NTMFS4C027NT1G	ONSEMI	获取价格	Power MOSFET

与NTMFS4C022N相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS4C022N

NTMFS4C022N 数据手册

与NTMFS4C022N相关器件

与NTMFS4C022N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS4C022N

NTMFS4C022N 数据手册

与NTMFS4C022N相关器件

与NTMFS4C022N相关文章

您还可以找

您在本页遇到什么问题？