Datasheet > NTMFS4C03N

NTMFS4C03N

更新时间： 2024-11-21 01:12:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	125K
描述
Power MOSFET Dual NâChannel

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中文翻译

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NTMFS4C03N 数据手册

NTMFS4C03N

Power MOSFET

30 V, 2.1 mW, 136 A, Single N−Channel,

SO−8FL

Features

• Small Footprint (5x6 mm) for Compact Design

http://onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(BR)DSS

DS(ON)

Compliant

2.1 mW @ 10 V

2.8 mW @ 4.5 V

30 V

136 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

D (5,6)

Gate−to−Source Voltage

"20

136

Continuous Drain Cur-

= 25°C

rent R

(Notes 1, 3)

Steady

State

G (4)

Power Dissipation

(Notes 1, 3)

Continuous Drain Cur-

T = 25°C

S (1,2,3)

N−CHANNEL MOSFET

rent R

(Notes 1, 2,

Steady

State

Power Dissipation

(Notes 1, 2, 3)

T = 25°C

3.1

MARKING

DIAGRAM

Pulsed Drain Current

T = 25°C, t = 10 ms

900

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

150

4C03N

AYWZZ

Source Current (Body Diode)

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

Single Pulse Drain−to−Source Avalanche

549

Energy (I

= 11 A)

L(pk)

Lead Temperature for Soldering Purposes

260

°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

ORDERING INFORMATION

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

1.95

°C/W

†

Device

Package

Shipping

NTMFS4C03NT1G

SO−8FL

(Pb−Free)

1500 /

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

Tape & Reel

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

NTMFS4C03NT3G

SO−8FL

(Pb−Free)

5000 /

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2014 − Rev. 0

NTMFS4C03N/D

12 3 4 5 6

中文翻译

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与NTMFS4C03N相关器件

型号	品牌	获取价格	描述	数据表
NTMFS4C03NT1G	ONSEMI	获取价格	Power MOSFET Dual NâChannel
NTMFS4C03NT3G	ONSEMI	获取价格	Power MOSFET Dual NâChannel
NTMFS4C054N	ONSEMI	获取价格	Power MOSFET
NTMFS4C054NT1G	ONSEMI	获取价格	Power MOSFET
NTMFS4C054NT3G	ONSEMI	获取价格	Power MOSFET
NTMFS4C05N	ONSEMI	获取价格	Power MOSFET 30 V, 78 A, Single NâChannel,
NTMFS4C05NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 78 A, Single NâChannel,
NTMFS4C05NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 78 A, Single NâChannel,
NTMFS4C06N	ONSEMI	获取价格	Power MOSFET 30 V, 69 A, Single NâChannel,
NTMFS4C06NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 69 A, Single NâChannel,

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