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NTMFS4C10N

更新时间： 2024-11-24 12:05:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 118K
描述
Power MOSFET 30 V, 46 A, Single N−Channel, SO−8 FL

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NTMFS4C10N 数据手册

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NTMFS4C10N  
Power MOSFET  
30 V, 46 A, Single N−Channel, SO−8 FL  
Features  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
• Optimized Gate Charge to Minimize Switching Losses  
http://onsemi.com  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
DS(ON)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
6.95 mW @ 10 V  
10.8 mW @ 4.5 V  
• CPU Power Delivery  
• DC−DC Converters  
30 V  
46 A  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D (5−8)  
Parameter  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
V
30  
20  
V
V
A
DSS  
V
GS  
Continuous Drain  
Current R  
T = 25°C  
I
D
15.0  
A
G (4)  
q
JA  
T = 80°C  
A
11.2  
2.49  
(Note 1)  
Power Dissipation  
T = 25°C  
A
P
W
A
D
D
D
D
S (1,2,3)  
N−CHANNEL MOSFET  
R
q
JA  
(Note 1)  
Continuous Drain  
T = 25°C  
A
I
22.5  
16.8  
5.6  
D
Current R  
(Note 1)  
≤ 10 s  
q
JA  
T = 80°C  
A
MARKING  
DIAGRAM  
Power Dissipation  
≤ 10 s (Note 1)  
T = 25°C  
A
P
W
A
R
q
JA  
Steady  
State  
D
Continuous Drain  
Current R  
T = 25°C  
A
I
D
8.2  
6.2  
S
S
S
G
D
D
1
q
JA  
4C10N  
AYWZZ  
T = 80°C  
A
(Note 2)  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Power Dissipation  
T = 25°C  
A
P
0.75  
W
A
R
q
JA  
(Note 2)  
D
Continuous Drain  
Current R  
T
= 25°C  
=80°C  
= 25°C  
I
D
46  
34  
C
q
JC  
A
Y
= Assembly Location  
= Year  
T
T
C
(Note 1)  
Power Dissipation  
P
23.6  
W
A
W
ZZ  
= Work Week  
= Lot Traceabililty  
C
R
q
JC  
(Note 1)  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
A
I
DM  
132  
80  
p
Current Limited by Package  
T = 25°C  
A
I
A
Dmax  
ORDERING INFORMATION  
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
+150  
°C  
J
†
Device  
Package  
Shipping  
T
NTMFS4C10NT1G  
SO−8 FL  
(Pb−Free)  
1500 /  
Tape & Reel  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
21  
7.0  
31  
A
S
dV/d  
V/ns  
mJ  
t
Single Pulse Drain−to−Source Avalanche  
Energy (T = 25°C, V = 10 V, I = 25 A ,  
pk  
E
AS  
NTMFS4C10NT3G  
SO−8 FL  
(Pb−Free)  
5000 /  
Tape & Reel  
J
GS  
L
L = 0.1 mH, R = 25 W) (Note 3)  
GS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8″ from case for 10 s)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. This is the absolute maximum rating. Parts are 100% tested at T = 25°C,  
J
V
GS  
= 10 V, I = 17 Apk, E = 14 mJ.  
L AS  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 3  
NTMFS4C10N/D  
 
1234567

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