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NTMFS4C025NT1G

更新时间： 2024-11-21 01:15:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 93K
描述
Power MOSFET

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NTMFS4C025NT1G 数据手册

 浏览型号NTMFS4C025NT1G的Datasheet PDF文件第2页浏览型号NTMFS4C025NT1G的Datasheet PDF文件第3页浏览型号NTMFS4C025NT1G的Datasheet PDF文件第4页浏览型号NTMFS4C025NT1G的Datasheet PDF文件第5页浏览型号NTMFS4C025NT1G的Datasheet PDF文件第6页浏览型号NTMFS4C025NT1G的Datasheet PDF文件第7页 
NTMFS4C025N  
Power MOSFET  
30 V, 69 A, Single N−Channel, SO−8 FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
www.onsemi.com  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Compliant  
3.41 mW @ 10 V  
4.88 mW @ 4.5 V  
Applications  
30 V  
69 A  
• CPU Power Delivery  
• DC−DC Converters  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
Unit  
V
V
DSS  
30  
20  
V
GS  
V
G (4)  
Continuous Drain  
Current R  
T = 25°C  
I
20.0  
A
A
D
q
JA  
T = 80°C  
A
14.9  
2.55  
S (1,2,3)  
N−CHANNEL MOSFET  
(Note 1)  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
W
A
D
D
D
D
R
q
JA  
MARKING  
DIAGRAMS  
D
Continuous Drain  
T = 25°C  
A
I
D
31.6  
23.7  
6.4  
Current R  
(Note 1)  
≤ 10 s  
q
JA  
T = 80°C  
A
S
S
S
D
D
Power Dissipation  
≤ 10 s (Note 1)  
T = 25°C  
A
P
I
W
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
R
q
JA  
4C025  
AYWZZ  
Steady  
State  
Continuous Drain  
Current R  
T = 25°C  
A
11  
8.2  
D
G
q
JA  
1
T = 80°C  
A
(Note 2)  
Power Dissipation  
(Note 2)  
D
T = 25°C  
A
P
I
0.77  
W
A
A
Y
= Assembly Location  
= Year  
R
q
JA  
Continuous Drain  
Current R  
T
= 25°C  
=80°C  
= 25°C  
69  
52  
W
ZZ  
= Work Week  
= Lot Traceabililty  
C
D
q
JC  
T
C
(Note 1)  
Power Dissipation  
(Note 1)  
T
C
P
30.5  
W
A
R
q
JC  
ORDERING INFORMATION  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
I
DM  
166  
A
p
†
Device  
Package  
Shipping  
Current Limited by Package  
T = 25°C  
A
I
80  
A
Dmax  
NTMFS4C025NT1G  
SO−8 FL  
(Pb−Free)  
1500 /  
Tape & Reel  
Operating Junction and Storage  
Temperature  
T ,  
−55 to  
+150  
°C  
J
T
STG  
NTMFS4C025NT3G  
SO−8 FL  
(Pb−Free)  
5000 /  
Tape & Reel  
Source Current (Body Diode)  
Drain to Source DV/DT  
I
28  
7.0  
68  
A
S
dV/d  
V/ns  
mJ  
t
Single Pulse Drain−to−Source Avalanche  
E
AS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Energy (T = 25°C, V = 10 V, I =37 A ,  
J
GS  
L
pk  
L = 0.1 mH, R = 25 W) (Note 3)  
GS  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. Parts are 100% tested at T = 25°C, V = 10 V, I = 27 A , EAS = 36 mJ.  
J
GS  
L
pk  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
August, 2016 − Rev. 1  
NTMFS4C025N/D  
 
1234567

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