Datasheet > NTMFS4C032N

NTMFS4C032N

更新时间： 2024-11-21 01:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	86K
描述
Power MOSFET

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中文翻译

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NTMFS4C032N 数据手册

NTMFS4C032N

Power MOSFET

30 V, 38 A, Single N−Channel, SO−8 FL

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

www.onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(ON)

Applications

7.35 mW @ 10 V

• CPU Power Delivery

• DC−DC Converters

30 V

38 A

11.15 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

D (5−8)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

Gate−to−Source Voltage

DSS

Continuous Drain

Current R

T = 25°C

13.0

G (4)

T = 80°C

9.7

(Note 1)

Power Dissipation

(Note 1)

T = 25°C

2.46

S (1,2,3)

N−CHANNEL MOSFET

Continuous Drain

T = 25°C

19.1

14.3

5.32

Current R

(Note 1)

≤ 10 s

T = 80°C

MARKING

DIAGRAM

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

Steady

State

Continuous Drain

Current R

T = 25°C

7.2

5.4

4C032

AYWZZ

T = 80°C

(Note 2)

Power Dissipation

(Note 2)

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

T = 25°C

0.75

Continuous Drain

Current R

= 25°C

=80°C

= 25°C

= Assembly Location

= Year

(Note 1)

Power Dissipation

(Note 1)

21.6

= Work Week

= Lot Traceabililty

Pulsed Drain Current

T = 25°C, t = 10 ms

106

Current Limited by Package

T = 25°C

Dmax

ORDERING INFORMATION

Operating Junction and Storage

Temperature

T ,

−55 to

+150

°C

STG

†

Device

Package

Shipping

Source Current (Body Diode)

Drain to Source DV/DT

7.0

NTMFS4C032NT1G

SO−8 FL

1500 /

dV/d

V/ns

(Pb−Free)

Tape & Reel

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, V = 10 V, I = 21 A ,

NTMFS4C032NT3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

L = 0.1 mH, R = 25 W) (Note 3)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. This is the absolute maximum rating. Parts are 100% tested at T = 25°C,

= 10 V, I = 15 Apk, E = 11 mJ.

L AS

Publication Order Number:

August, 2016 − Rev. 1

NTMFS4C032N/D

12 3 4 5 6 7

中文翻译

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型号	品牌	获取价格	描述	数据表
NTMFS4C032NT1G	ONSEMI	获取价格	Power MOSFET
NTMFS4C032NT3G	ONSEMI	获取价格	Power MOSFET
NTMFS4C03N	ONSEMI	获取价格	Power MOSFET Dual NâChannel
NTMFS4C03NT1G	ONSEMI	获取价格	Power MOSFET Dual NâChannel
NTMFS4C03NT3G	ONSEMI	获取价格	Power MOSFET Dual NâChannel
NTMFS4C054N	ONSEMI	获取价格	Power MOSFET
NTMFS4C054NT1G	ONSEMI	获取价格	Power MOSFET
NTMFS4C054NT3G	ONSEMI	获取价格	Power MOSFET
NTMFS4C05N	ONSEMI	获取价格	Power MOSFET 30 V, 78 A, Single NâChannel,
NTMFS4C05NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 78 A, Single NâChannel,

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