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NTMFS4985NF

更新时间： 2024-12-01 12:49:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 120K
描述
Power MOSFET 30 V, 65 A, Single N−Channel, SO−8 FL

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NTMFS4985NF 数据手册

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NTMFS4985NF  
Power MOSFET  
30 V, 65 A, Single N−Channel, SO−8 FL  
Features  
• Integrated Schottky Diode  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
DS(ON)  
MAX  
I MAX  
D
(BR)DSS  
3.4 mW @ 10 V  
5.0 mW @ 4.5 V  
Applications  
• CPU Power Delivery  
30 V  
65 A  
• Synchronous Rectification for DC−DC Converters  
• Low Side Switching  
N−CHANNEL MOSFET  
• Telecom Secondary Side Rectification  
(5, 6)  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
G
V
DSS  
V
20  
V
GS  
(4)  
Continuous Drain  
Current R  
I
D
A
T = 25°C  
23.9  
A
q
JA  
(1, 2, 3)  
S
T = 85°C  
A
17.2  
3.04  
(Note 1)  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
W
A
D
D
D
D
MARKING  
DIAGRAM  
R
q
JA  
Continuous Drain  
I
D
T = 25°C  
A
36  
26  
Current R  
10 sec  
v
D
q
JA  
T = 85°C  
A
S
S
S
G
D
D
1
Power Dissipation  
T = 25°C  
A
P
I
7.0  
W
A
4985NF  
AYWZZ  
R
t v 10 sec  
q
JA,  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Steady  
State  
Continuous Drain  
T = 25°C  
A
17.5  
12.6  
1.63  
D
Current R  
(Note 2)  
q
D
JA  
T = 85°C  
A
4895NF = Specific Device Code  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
W
A
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
R
q
JA  
Continuous Drain  
Current R  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
65  
47  
D
q
JC  
(Note 1)  
Power Dissipation  
(Note 1)  
P
22.73  
W
A
R
q
JC  
ORDERING INFORMATION  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
195  
100  
†
Device  
Package  
Shipping  
Current limited by package  
T = 25°C  
A
I
A
Dmaxpkg  
NTMFS4985NFT1G  
SO−8FL  
(Pb−Free)  
1500 /  
Operating Junction and Storage  
Temperature  
T ,  
−55 to  
+150  
°C  
J
Tape & Reel  
T
STG  
NTMFS4985NFT3G  
SO−8FL  
(Pb−Free)  
5000 /  
Tape & Reel  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
64  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Single Pulse Drain−to−Source Avalanche  
Energy (V = 50 V, V = 10 V, I = 33 A ,  
pk  
54  
DD  
GS  
L
L = 0.1 mH, R = 25 W)  
G
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
July, 2012 − Rev. 2  
NTMFS4985NF/D  
1234567

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