Datasheet > NTL4502N

NTL4502N

更新时间： 2024-12-01 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	69K
描述
Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAK-TM Package

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中文翻译

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NTL4502N 数据手册

NTL4502N

Quad Power MOSFET

24 V, 15 A, N−Channel, PInPAKt Package

Features

• Four N−Channel MOSFETs in a Single Package

http://onsemi.com

• High Drain Current (Up to 80A per Device, Single Pulse t < 10 µs,

qJC

= 1.5 °C/W)

• High Input Impedance for Ease of Drive

• Ultra Low On−resistance (R ) Provides Low Conduction Losses

TYP

I MAX

(Note 1)

(BR)DSS

DS(ON)

DS(on)

8.0 mΩ @ 4.5 V

11.2 mΩ @ 10 V

• Very Fast Switching Times Provides Low Switching Losses

• Low Parasitic Inductance

24 V

15 A

• Low Stored Charge for Efficient Switching

• Very Low V Ideal for Synchronous Rectification

• 200% Footprint Reduction Compared to Similar DPAK Solution for

the Same Power

MARKING

DIAGRAM

• Advanced Leadless Power Integrated Package (PInPAK)

Applications

NTL4502N

AYWW

• DC−DC Converters

CASE 495

PInPAK

STYLE 1

• Motherboard/Server Voltage Regulator

• Telecomm/Industrial Power Supply

• H−Bridge Circuits

= Specific Device Code

= Assembly Location

= Year

• Low Voltage Motor Control

= Work Week

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Units

S1 D1G1 S2 D2G2

DSS

5 6

±20

Continuous Drain

Current (Note 1)

Steady

State

T =25°C

D1 16

D4 15

7 D2

8 D3

T =85°C

10.9

18.8

2.9

t≤10 s

T =25°C

Power Dissipation

(Note 1)

T =25°C

Steady

State

t≤10 s

4.5

11.4

8.2

14 13 12 11 10 9

S4 D4 G4 S3 D3G3

Continuous Drain

Current (Note 2)

Steady

State

T =25°C

T =85°C

(Bottom View)

Power Dissipation

(Note 2)

T =25°C

1.7

Pinout Diagram

Pulsed Drain Current tp=10 µs

ORDERING INFORMATION

Operating Junction and Storage

Temperature

T , T

−55 to 150

°C

STG

Device

Package

Shipping

Source Current (Body Diode)

NTL4502NT1

PInPAK

1500 / Reel

Single Pulse Drain−to−Source Avalanche

Energy – (V = 25 V, V =10 V, I =60 A,

EAS

L=0.1 mH, R = 1.0 kW)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

August, 2003 − Rev. 2

NTL4502N/D

12 3 4 5 6

中文翻译

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与NTL4502N相关器件

型号	品牌	获取价格	描述	数据表
NTL4502NT1	ONSEMI	获取价格	Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAK-TM Package
NTL4502NT1G	ONSEMI	获取价格	TRANSISTOR 11.4 A, 24 V, 0.013 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEADLESS, CAS
NTLGD3502N	ONSEMI	获取价格	Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package
NTLGD3502NT1G	ONSEMI	获取价格	Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package
NTLGD3502NT2G	ONSEMI	获取价格	Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package
NTLGF3402P	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY, P−Channel, 2.0 A Sc
NTLGF3402PT1G	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY, P−Channel, 2.0 A Sc
NTLGF3402PT1G	ROCHESTER	获取价格	2.3A, 20V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, 3 X 3 MM, 1 MM HEIGHT, LEAD FREE, CASE 5
NTLGF3402PT2G	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY, P−Channel, 2.0 A Sc
NTLGF3501N	ONSEMI	获取价格	Power MOSFET and Schottky Diode

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