Datasheet > NSVT5551MR6T1G

NSVT5551MR6T1G

更新时间： 2024-11-05 11:16:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	290K
描述
NPN General-Purpose Amplifier

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数据手册

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NSVT5551MR6T1G 数据手册

DATA SHEET

www.onsemi.com

NPN General-Purpose

Amplifier

ELECTRICAL CONNECTION

Collector

4, 6

NSVT5551MR6

Base

1, 3

Features

• This Device Has Matched Dies

Emitter

2, 5

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS

Pin 1

(T = 25°C, unless otherwise noted)

TSOT23 6−Lead

CASE 419BL

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

160

Unit

CEO

CBO

EBO

180

MARKING DIAGRAM

Collector Current − Continuous

Junction Temperature

600

°C

3S2 M

150

Storage Temperature Range

−55 to 150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

3S2

= Specific Device Code

= Date Code

THERMAL CHARACTERISTICS (Notes 1, 2)

(T = 25°C, unless otherwise noted)

PIN ASSIGNMENT

Characteristic

Symbol

Max

0.7

Unit

Power Dissipation (T = 25°C)

Derate Above 25°C

5.6

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

180

ꢀ

1. P total, for both transistors. For each transistor, P = 350 mW.

2. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)

with minimum land pattern size.

ORDERING INFORMATION

†

Device

NSVT5551MR6T1G

Shipping

Package

3000 / Tape &

Reel

TSOT23−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

March, 2022 − Rev. 0

NSVT5551MR6/D

12 3 4 5

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