Datasheet > NSVUMC5NT2G

NSVUMC5NT2G

更新时间： 2024-11-05 01:13:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
11页	178K
描述
Dual Common Base-Collector Bias Resistor Transistors

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中文翻译

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技术参数
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NSVUMC5NT2G 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	5	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	8 weeks
风险等级：	1.5	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	20	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	2
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN/PNP
最大功率耗散 (Abs)：	0.15 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

NSVUMC5NT2G 数据手册

UMC2NT1G,

NSVUMC2NT1G,

UMC3NT1G,

NSVUMC3NT1G,

UMC5NT1G,

NSVUMC5NT2G

http://onsemi.com

Dual Common

Base-Collector Bias

Resistor Transistors

SC−88A/SOT−353

CASE 419A

STYLE 6

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The Bias Resistor Transistor (BRT) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the UMC2NT1G series, two

complementary BRT devices are housed in the SOT−353 package

which is ideal for low power surface mount applications where board

space is at a premium.

MARKING DIAGRAM

Features

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

 Available in 8 mm, 7 inch/3000 Unit Tape and Reel

Ux M G

 AEC−Q101 Qualified and PPAP Capable

 NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

= Device Marking

= 2, 3 or 5

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

MAXIMUM RATINGS (T = 25C unless otherwise noted, common for

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Q and Q , − minus sign for Q (PNP) omitted)

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

Vdc

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2011

Publication Order Number:

December, 2011 − Rev. 10

UMC2NT1/D

12 3 4 5 6 7...11

中文翻译

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与NSVUMC5NT2G相关器件

型号	品牌	获取价格	描述	数据表
NSVUMZ1NT1G	ONSEMI	获取价格	NPN PNP 双极晶体管
NSW120	DIODES	获取价格	Rectifier Diode,
NSW130	DIODES	获取价格	Rectifier Diode,
NSW140	DIODES	获取价格	Rectifier Diode,
NSW150	DIODES	获取价格	Rectifier Diode,
NSW1520	DIODES	获取价格	Rectifier Diode,
NSW1530	DIODES	获取价格	Rectifier Diode,
NSW1540	DIODES	获取价格	Rectifier Diode,
NSW1550	DIODES	获取价格	Rectifier Diode,
NSW160	DIODES	获取价格	Rectifier Diode,

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