Datasheet > NSVT846MTWFTBG

NSVT846MTWFTBG

更新时间： 2024-11-05 11:14:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	258K
描述
General Purpose TransistorsNPN, 65 V, 100 mA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSVT846MTWFTBG 数据手册

DATA SHEET

www.onsemi.com

COLLECTOR

General Purpose

Transistors

NPN, 65 V, 100 mA

BASE

EMITTER

NST846MTWFT

The NST846MTWFT is designed for general purpose amplifier

applications. It is housed in an ultra−compact DFN1010−3 with

wettable flanks, recommended for the automotive industry’s optical

inspection methods. The transistor is ideal for low−power surface

mount applications where board space and reliability are at a premium.

MARKING

DIAGRAM

46M

Features

XDFNW3

CASE 521AC

• Wettable Flank Package for Optimal Automated Optical

Inspection (AOI)

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

= Specific Device Code

= Month Code

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

ORDERING INFORMATION

Compliant

†

Device

Package

Shipping

NST846MTWFTBG

XDFNW3

(Pb−Free)

3000 / Tape &

Reel

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

Unit

Vdc

NSVT846MTWFTBG

XDFNW3

(Pb−Free)

3000 / Tape &

Reel

CEO

CBO

EBO

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

5.0

100

200

Collector Current − Continuous

Collector Current − Peak

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance Junction−to−Ambient

(Note 1)

220

°C/W

Total Power Dissipation per Device

570

@T = 25°C

(Note 1)

Junction and Storage Temperature Range

T , T

−65 to

+150

°C

stg

1. Per JESD51−7 with standard PCB footprint and 2 oz. Cu.

Publication Order Number:

February, 2023 − Rev. 1

NST846MTWFT/D

12 3 4 5 6 7

中文翻译

下载PDF

与NSVT846MTWFTBG相关器件

型号	品牌	获取价格	描述	数据表
NSVT856MTWFTBG	ONSEMI	获取价格	General Purpose Transistors PNP, 65 V, 100 mA
NSVTB60BDW1T1G	ONSEMI	获取价格	PNP General Purpose and NPN Bias Resistor Transistor Combination
NSVUMC2NT1G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSVUMC3NT1G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSVUMC5NT1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVUMC5NT2G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSVUMZ1NT1G	ONSEMI	获取价格	NPN PNP 双极晶体管
NSW120	DIODES	获取价格	Rectifier Diode,
NSW130	DIODES	获取价格	Rectifier Diode,
NSW140	DIODES	获取价格	Rectifier Diode,