DATA SHEET
www.onsemi.com
COLLECTOR
General Purpose
Transistors
PNP, 65 V, 100 mA
3
1
BASE
2
EMITTER
NST856MTWFT
The NST856MTWFT is designed for general purpose amplifier
applications. It is housed in an ultra−compact DFN1010−3 with
wettable flanks, recommended for the automotive industry’s optical
inspection methods. The transistor is ideal for low−power surface
mount applications where board space and reliability are at a premium.
3
MARKING
DIAGRAM
56M
1
2
Features
XDFNW3
CASE 521AC
• Wettable Flank Package for Optimal Automated Optical
Inspection (AOI)
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
56
M
= Specific Device Code
= Month Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ORDERING INFORMATION
Compliant
†
Device
Package
Shipping
NST856MTWFTBG
XDFNW3
(Pb−Free)
3000 / Tape &
Reel
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
−65
Unit
Vdc
Vdc
Vdc
mA
NSVT856MTWFTBG
XDFNW3
(Pb−Free)
3000 / Tape &
Reel
V
CEO
V
CBO
V
EBO
−80
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
−5.0
−100
200
Collector Current − Continuous
Collector Current − Peak
I
C
I
mA
CM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
(Note 1)
R
191
°C/W
q
JA
Total Power Dissipation per Device
P
D
650
mW
@T = 25°C
(Note 1)
A
Junction and Storage Temperature Range
T , T
−65 to
+150
°C
J
stg
1. Per JESD51−7 with standard PCB footprint and 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2023 − Rev. 1
NST856MTWFT/D