Datasheet > NSVT807CMTWFTBG

NSVT807CMTWFTBG

更新时间： 2024-11-05 17:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	158K
描述
General Purpose Transistors PNP, 45 V, 500 mA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSVT807CMTWFTBG 数据手册

DATA SHEET

www.onsemi.com

General Purpose Transistor

PNP, 45 V, 500 mA

XDFNW3

CASE 521AC

NST807

The NST807CMTW is designed for general purpose amplifier

applications. It is housed in DFN1010−3 offering superior thermal

performance. The transistor is ideal for surface mount applications

where board space and reliability are at a premium.

COLLECTOR 3

Specification Features

BASE

• Wettable Flank Package for Optimal Automated Optical Inspection

(AOI)

EMITTER 2

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MARKING DIAGRAM

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

R7M

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

−45

−5.0

500

1.0

Unit

Vdc

R7 = Specific Device Code

= Date Code

Collector−Emitter Voltage

CEO

CBO

EBO

Collector−Base Voltage

Emitter−Base Voltage

ORDERING INFORMATION

Collector Current − Continuous (Note 1)

Collector Current − Peak (Note 1)

†

Device

Package

Shipping

NST807CMTWFTBG

NSVT807CMTWFTBG

XDFNW3 3000 / Tape &

(Pb−Free) Reel

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Power Dissipation (Note 2)

@ T = 25°C

350

2.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

(Note 2)

145

°C/W

Junction and Storage Temperature Range

T , T

−65 to

+150

°C

stg

1. Reference SOA Curve

2. Per JESD51−7 with standard PCB footprint and 2 oz Cu.

Publication Order Number:

March, 2024 − Rev. 0

NST807/D

12 3 4 5 6

中文翻译

下载PDF

与NSVT807CMTWFTBG相关器件

型号	品牌	获取价格	描述	数据表
NSVT817CMTWFTBG	ONSEMI	获取价格	General Purpose Transistors NPN, 45 V, 500 mA
NSVT846MTWFTBG	ONSEMI	获取价格	General Purpose TransistorsNPN, 65 V, 100 mA
NSVT856MTWFTBG	ONSEMI	获取价格	General Purpose Transistors PNP, 65 V, 100 mA
NSVTB60BDW1T1G	ONSEMI	获取价格	PNP General Purpose and NPN Bias Resistor Transistor Combination
NSVUMC2NT1G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSVUMC3NT1G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSVUMC5NT1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVUMC5NT2G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
NSVUMZ1NT1G	ONSEMI	获取价格	NPN PNP 双极晶体管
NSW120	DIODES	获取价格	Rectifier Diode,