DATA SHEET
www.onsemi.com
Dual-Chip NPN
General-Purpose Amplifier
6
1
SOT−363/SC−88/
SC70−6
CASE 419B
NSVT5551DW1
Features
• This Device is Designed for General−purpose High Voltage
Amplifier
MARKING DIAGRAM
• Simplifies Circuit Design
• Reduces Board Space
P1 M
• Reduces Component Count
1
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
P1
M
= Specific Device Code
= Date Code
PIN ASSIGNMENT
ABSOLUTE MAXIMUM RATINGS (Notes 1, 2)
A
(T = 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
160
Unit
V
V
CEO
V
CBO
V
EBO
180
V
6.0
V
Collector Current − Continuous
I
200
mA
°C
C
Operating and Storage Junction
Temperature Range
T , T
−55 to 150
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low duty−cycle operations.
ORDERING INFORMATION
†
Device
NSVT5551DW1T1G
Shipping
Package
SC88−6L
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS (Note 3)
A
(T = 25°C unless otherwise noted)
Characteristic
Total Device Dissipation
Derate Above 25°C
Symbol
Max
200
1.6
Unit
mW
P
D
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
625
q
JA
3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0
NSVT5551DW1/D