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NSVT5551DW1T1G PDF预览

NSVT5551DW1T1G

更新时间: 2024-11-05 11:12:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 103K
描述
NPN Multi-Chip

NSVT5551DW1T1G 数据手册

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DATA SHEET  
www.onsemi.com  
Dual-Chip NPN  
General-Purpose Amplifier  
6
1
SOT363/SC88/  
SC706  
CASE 419B  
NSVT5551DW1  
Features  
This Device is Designed for Generalpurpose High Voltage  
Amplifier  
MARKING DIAGRAM  
Simplifies Circuit Design  
Reduces Board Space  
P1 M  
Reduces Component Count  
1
Available in 8 mm, 7inch/3,000 Unit Tape and Reel  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
P1  
M
= Specific Device Code  
= Date Code  
PIN ASSIGNMENT  
ABSOLUTE MAXIMUM RATINGS (Notes 1, 2)  
A
(T = 25°C unless otherwise noted)  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
160  
Unit  
V
V
CEO  
V
CBO  
V
EBO  
180  
V
6.0  
V
Collector Current Continuous  
I
200  
mA  
°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to 150  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steadystate limits. onsemi should be consulted on applications  
involving pulsed or low dutycycle operations.  
ORDERING INFORMATION  
Device  
NSVT5551DW1T1G  
Shipping  
Package  
SC886L  
(PbFree)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS (Note 3)  
A
(T = 25°C unless otherwise noted)  
Characteristic  
Total Device Dissipation  
Derate Above 25°C  
Symbol  
Max  
200  
1.6  
Unit  
mW  
P
D
mW/°C  
°C/W  
Thermal Resistance,  
JunctiontoAmbient  
R
625  
q
JA  
3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)  
with minimum land pattern size.  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
February, 2022 Rev. 0  
NSVT5551DW1/D  
 

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