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NP75N04YLG-E1-AY PDF预览

NP75N04YLG-E1-AY

更新时间: 2024-11-14 01:14:43
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瑞萨 - RENESAS /
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8页 356K
描述
N-channel Power MOS FET

NP75N04YLG-E1-AY 数据手册

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Preliminary Data Sheet  
NP75N04YLG  
40 V – 75 A – N-channel Power MOS FET  
Application: Automotive  
R07DS1247EJ0100  
Rev.1.00  
Mar 02, 2015  
Description  
The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications.  
Features  
Super low on-state resistance  
R
R
DS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A)  
DS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A)  
Logic level drive type  
Gate to Source ESD protection diode built in  
Designed for automotive application and AEC-Q101 qualified  
Ordering Information  
Part No.  
Lead Plating  
Pure Sn (Tin)  
Packing  
Taping (E1 type)  
Taping (E2 type)  
Package  
8-pin HSON  
NP75N04YLG-E1-AY *1  
NP75N04YLG-E2-AY *1  
Tape 2500 p/reel  
Note: *1 Pb-free (This product does not contain Pb in the external electrode)  
Absolute Maximum Ratings (TA = 25°C)  
Item  
Symbol  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
Ratings  
Unit  
V
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) *1  
40  
20  
V
75  
A
225  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C) *2  
Channel Temperature  
138  
W
W
°C  
°C  
A
PT2  
1.0  
Tch  
175  
Storage Temperature  
Tstg  
–55 to +175  
35  
Repetitive Avalanche Current *3  
Repetitive Avalanche Energy *3  
Notes: *1 TC = 25°C, PW 10 μs, Duty Cycle 1%  
IAR  
EAR  
123  
mJ  
*2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm)  
*3 Tch(peak) 150°C, RG = 25 Ω  
Thermal Resistance  
Channel to Case Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.09  
150  
°C/W  
°C/W  
Channel to Ambient Thermal Resistance  
R07DS1247EJ0100 Rev.1.00  
Mar 02, 2015  
Page 1 of 6  

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