Datasheet > NP75N04YLG-E1-AY

NP75N04YLG-E1-AY

更新时间： 2024-11-14 01:14:43

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	356K
描述
N-channel Power MOS FET

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NP75N04YLG-E1-AY 数据手册

Preliminary Data Sheet

NP75N04YLG

40 V – 75 A – N-channel Power MOS FET

Application: Automotive

R07DS1247EJ0100

Rev.1.00

Mar 02, 2015

Description

The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

•

Super low on-state resistance

_DS(on)= 4.8 mΩ MAX. (V_GS= 10 V, I_D= 38 A)

_DS(on)= 8.3 mΩ MAX. (V_GS= 4.5 V, I_D= 38 A)

•

Logic level drive type

Gate to Source ESD protection diode built in

Designed for automotive application and AEC-Q101 qualified

Ordering Information

Part No.

Lead Plating

Pure Sn (Tin)

Packing

Taping (E1 type)

Taping (E2 type)

Package

8-pin HSON

NP75N04YLG-E1-AY ^*1

NP75N04YLG-E2-AY ^*1

Tape 2500 p/reel

Note: *1 Pb-free (This product does not contain Pb in the external electrode)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

Drain Current (pulse) ^*1

225

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C) ^*2

Channel Temperature

138

°C

P_T2

1.0

T_ch

175

Storage Temperature

T_stg

–55 to +175

Repetitive Avalanche Current ^*3

Repetitive Avalanche Energy ^*3

Notes: *1 T_C= 25°C, P_W≤ 10 μs, Duty Cycle ≤ 1%

I_AR

E_AR

123

*2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm)

*3 Tch(peak) ≤ 150°C, R_G= 25 Ω

Thermal Resistance

Channel to Case Thermal Resistance

R_th(ch-C)

R_th(ch-A)

1.09

150

°C/W

Channel to Ambient Thermal Resistance

R07DS1247EJ0100 Rev.1.00

Mar 02, 2015

Page 1 of 6

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