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NP70N10KUF-E1-AZ PDF预览

NP70N10KUF-E1-AZ

更新时间: 2024-11-13 18:33:47
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲晶体管
页数 文件大小 规格书
9页 199K
描述
Power Field-Effect Transistor, 70A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, MP-25ZK, 3 PIN

NP70N10KUF-E1-AZ 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LEAD FREE, TO-263, MP-25ZK, 3 PINReach Compliance Code:compliant
风险等级:5.7雪崩能效等级(Eas):48 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):70 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):135 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NP70N10KUF-E1-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
NP70N10KUF  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications.  
ORDERING INFORMATION  
(TO-263)  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
Note  
NP70N10KUF-E1-AZ  
NP70N10KUF-E2-AZ  
Tape  
TO-263 (MP-25ZK)  
typ. 1.5 g  
Note  
800 p/reel  
Note See “TAPE INFORMATION”  
FEATURES  
Channel temperature 175 degree rating  
Super low on-state resistance  
RDS(on) = 20 mΩ MAX. (VGS = 10 V, ID = 35 A)  
Low Ciss: Ciss = 2500 pF TYP.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
100  
V
V
±20  
±70  
A
±135  
1.8  
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
PT2  
120  
Tch  
175  
Storage Temperature  
Tstg  
55 to +175  
22  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
Notes 1. PW 10 μs, Duty Cycle 1%  
IAS  
EAS  
48  
mJ  
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
1.25  
83.3  
°C/W  
°C/W  
Rth(ch-A)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18040EJ2V0DS00 (2nd edition)  
Date Published June 2006 NS CP(K)  
Printed in Japan  
2006  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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