Datasheet > NESG250134-T1

NESG250134-T1

更新时间： 2024-01-01 23:01:52

品牌	Logo	应用领域
日电电子 - NEC		放大器晶体管
页数	文件大小	规格书
14页	154K
描述
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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NESG250134-T1 技术参数

NESG250134

PA EVALUATION BOARD (f = 460 MHz)

GND V

GND

R1 C10

RF IN

RF OUT

Notes

1. 38 × 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.

2. Back side: GND pattern

3. Solder gold plated on pattern

: Through holes

PA EVALUATION CIRCUIT (f = 460 MHz)

C10

RF OUT

RF IN

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Data Sheet PU10422EJ03V0DS

1...5 6 789 10 11...14

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型号	品牌	获取价格	描述	数据表
NESG250134-T1-AZ	CEL	获取价格	NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIM
NESG250134-T1-AZ	RENESAS	获取价格	NESG250134-T1-AZ
NESG250134-T1-AZ	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic
NESG250134-T1-AZFB	RENESAS	获取价格	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN
NESG250134-T1-AZ-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic
NESG250134-T1FB	NEC	获取价格	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
NESG250134-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic
NESG250134-T1-FB-AZ	RENESAS	获取价格	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3
NESG260234	NEC	获取价格	3-PIN POWER MINIMOLD
NESG260234	CEL	获取价格	NPN SILICON GERMANIUM RF TRANSISTOR