Datasheet > NESG260234-T1

NESG260234-T1

更新时间： 2024-02-29 11:30:44

品牌	Logo	应用领域
CEL		晶体晶体管放大器
页数	文件大小	规格书
11页	353K
描述
NPN SILICON GERMANIUM RF TRANSISTOR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NESG260234-T1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PSSO-F3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.17	最大集电极电流 (IC)：	0.6 A
集电极-发射极最大电压：	7.2 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PSSO-F3
JESD-609代码：	e6	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

NESG260234-T1 数据手册

NPN SILICON GERMANIUM RF TRANSISTOR

NESG260234

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (1 W)

3-PIN POWER MINIMOLD (34 PKG)

FEATURES

• This product is suitable for medium output power (1 W) amplification

P^out= 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

P^out= 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz

•

MSG (Maximum Stable Gain) = 23 dB TYP. @ V^CE= 6 V, Ic = 100 mA, f = 460 MHz

Using UHS2-HV process (SiGe technology), V^CBO(ABSOLUTE MAXIMUM RATINGS) = 25 V

3-pin power minimold (34 PKG)

ORDERING INFORMATION

Part Number

NESG260234

Order Number

Package

Quantity

Supplying Form

NESG260234-AZ

3-pin power minimold 25 pcs

(Pb-Free) ^{Note1, 2}

(Non reel)

• Magazine case

NESG260234-T1 NESG260234-T1-AZ

1 kpcs/reel • 12 mm wide embossed taping

• Pin 2 (Emitter) face the perforation side of the tape

Notes 1. Contains Lead in the part except the electrode terminals.

2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

9.2

2.8

600

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

1.9

150

°C

Tstg

−65 to +150

Note Mounted on 34.2 cm²× 0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10547EJ02V0DS (2nd edition)

Date Published May 2005 CP(K)

The mark shows major revised points.

12 3 4 5 6 7...11

下载PDF

与NESG260234-T1相关器件

型号	品牌	描述	获取价格	数据表
NESG260234-T1-AZ	NEC	暂无描述	获取价格
NESG260234-T1FB-AZ	NEC	暂无描述	获取价格
NESG270034	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-A	RENESAS	RF & Microwave device	获取价格
NESG270034-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-AZ-FB	RENESAS	TRANSISTOR RF POWER TRANSISTOR, BIP RF Power	获取价格