Datasheet > NESG270034-T1-AZ

NESG270034-T1-AZ

更新时间： 2024-01-10 00:24:13

品牌	Logo	应用领域
CEL		晶体晶体管输出元件
页数	文件大小	规格书
11页	330K
描述
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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NESG270034-T1-AZ 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Base Number Matches：	1

NESG270034-T1-AZ 数据手册

NPN SILICON GERMANIUM RF TRANSISTOR

NESG270034

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (2 W)

3-PIN POWER MINIMOLD (34 PKG)

FEATURES

• This product is suitable for medium output power (2 W) amplification

P^out= 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

P^out= 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz

•

Using UHS2-HV process (SiGe technology), V^CBO(ABSOLUTE MAXIMUM RATINGS) = 25 V

3-pin power minimold (34 PKG)

ORDERING INFORMATION

Part Number

NESG270034

Order Number

Package

Quantity

25 pcs

Supplying Form

NESG270034-AZ

3-pin power minimold

(34 PKG) (Pb-Free) ^Note1,(Non reel)

• Magazine case

NESG270034-T1 NESG270034-T1-AZ

1 kpcs/reel • 12 mm wide embossed taping

• Pin 2 (Emitter) face the perforation side of the tape

Notes 1. Contains Lead in the part except the electrode terminals.

2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

9.2

2.8

750

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

1.9

150

°C

Tstg

−65 to +150

Note Mounted on 34.2 cm²× 0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10577EJ01V0DS (1st edition)

Date Published September 2005 CP(K)

NEC Compound Semiconductor Devices, Ltd. 2005

12 3 4 5 6 7...11

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