Datasheet > NESG270034-T1-AZ

NESG270034-T1-AZ

更新时间： 2024-02-17 17:38:42

品牌	Logo	应用领域
CEL		晶体晶体管输出元件
页数	文件大小	规格书
11页	330K
描述
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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NESG270034-T1-AZ 技术参数

NESG270034

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

2.0

Mounted on glass epoxy PWB

(34.2 cm²× 0.8 mm (t) )

1.6

1.2

0.8

Nature Neglect

0.4

100 125 150 175

(˚C)

Ambient Temperature T

Remark The graph indicates nominal characteristics.

Preliminary Data Sheet PU10577EJ01V0DS

1 2 345 6 7...11

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型号	品牌	描述	获取价格	数据表
NESG270034-T1-AZ-FB	RENESAS	TRANSISTOR RF POWER TRANSISTOR, BIP RF Power	获取价格
NESG3031M05	NEC	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR	获取价格
NESG3031M05	CEL	NPN SILICON GERMANIUM RF TRANSISTOR	获取价格
NESG3031M05-A	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格
NESG3031M05-A-FB	RENESAS	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN	获取价格
NESG3031M05-FB	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格