5秒后页面跳转
NESG3031M14-A PDF预览

NESG3031M14-A

更新时间: 2024-01-26 05:00:18
品牌 Logo 应用领域
CEL 晶体晶体管光电二极管放大器
页数 文件大小 规格书
9页 548K
描述
NPN SiGe HIGH FREQUENCY TRANSISTOR

NESG3031M14-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.1最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.25 pF集电极-发射极最大电压:4.3 V
配置:SINGLE最高频带:C BAND
JESD-30 代码:R-PDSO-F4JESD-609代码:e6
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON GERMANIUMBase Number Matches:1

NESG3031M14-A 数据手册

 浏览型号NESG3031M14-A的Datasheet PDF文件第2页浏览型号NESG3031M14-A的Datasheet PDF文件第3页浏览型号NESG3031M14-A的Datasheet PDF文件第4页浏览型号NESG3031M14-A的Datasheet PDF文件第5页浏览型号NESG3031M14-A的Datasheet PDF文件第6页浏览型号NESG3031M14-A的Datasheet PDF文件第7页 
DATASHEET  
NEC's NPN SiGe  
HIGH FREQUENCY TRANSISTOR  
NESG3031M14  
FEATURES  
THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE,  
HIGH-GAIN AMPLIFICATION:  
NF=0.95dBTYP.,Ga =10.0dBTYP.@VCE =2V,IC =6mA,f=5.2GHz  
NF=1.1dBTYP.,Ga =9.5dBTYP.@VCE =2V,IC =6mA,f=5.8GHz  
MAXIMUM STABLE POWER GAIN:  
MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz  
SiGe HBT TECHNOLOGY (UHS3) ADOPTED:  
fmax = 110 GHz  
M14 Package  
M14 PACKAGE:  
4-pin lead-less minimold package  
ORDERING INFORMATION  
PART NUMBER  
NESG3031M14-A  
NESG3031M14-T3-A  
QUANTITY  
SUPPLYING FORM  
50 pcs (Non reel)  
10 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
Unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25ºC)  
PARAMETER  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
RATINGS  
12.0  
UNIT  
V
4.3  
V
1.5  
V
IC  
35  
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
150  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB  
Caution  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.  
California Eastern Laboratories  
1

与NESG3031M14-A相关器件

型号 品牌 描述 获取价格 数据表
NESG3031M14-A-FB NEC 暂无描述

获取价格

NESG3031M14-FB NEC RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN

获取价格

NESG3031M14-FB-A NEC RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN

获取价格

NESG3031M14-T3 NEC NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

获取价格

NESG3031M14-T3-A CEL NPN SiGe HIGH FREQUENCY TRANSISTOR

获取价格

NESG3031M14-T3-AFB NEC 暂无描述

获取价格