Datasheet > NESG3032M14-A

NESG3032M14-A

更新时间： 2024-02-27 10:55:40

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
6页	263K
描述
NPN SILICON GERMANIUM RF TRANSISTOR

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NESG3032M14-A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

NESG3032M14-A 数据手册

NPN SILICON GERMANIUM RF TRANSISTOR

NESG3032M14

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)

FEATURES

•

The device is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP. @ V^CE= 2 V, IC = 6 mA, f = 2.0 GHz

•

Maximum stable power gain: MSG = 20.5 dB TYP. @ V^CE= 2 V, IC = 15 mA, f = 2.0 GHz

SiGe HBT technology (UHS3) adopted: f^max= 110 GHz

4-pin lead-less minimold (M14, 1208 package)

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG3032M14

NESG3032M14-A

4-pin lead-less minimold 50 pcs

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 4 (Emitter) face the

perforation side of the tape

(M14, 1208 package)

(Pb-Free)

(Non reel)

10 kpcs/reel

NESG3032M14-T3 NESG3032M14-T3-A

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

12.0

Unit

4.3

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10575EJ01V0DS (1st edition)

Date Published July 2005 CP(K)

NEC Compound Semiconductor Devices, Ltd. 2005

12 3 4 5 6

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