Datasheet > NESG3032M14-A-YFB

NESG3032M14-A-YFB

更新时间： 2024-01-10 18:26:04

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
15页	241K
描述
RF SMALL SIGNAL TRANSISTOR

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NESG3032M14-A-YFB 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

NESG3032M14-A-YFB 数据手册

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Preliminary Data Sheet

NESG3032M14

NPN SiGe RF Transistor for Low Noise, High-Gain

R09DS0048EJ0300

Rev.3.00

Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)

Sep 18, 2012

<R>

FEATURES

•

The NESG3032M14 is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP. @ V^CE= 2 V, IC = 6 mA, f = 2.0 GHz

•

Maximum stable power gain: MSG = 20.5 dB TYP. @ V^CE= 2 V, IC = 15 mA, f = 2.0 GHz

SiGe HBT technology (UHS3) adopted: f^max= 110 GHz

4-pin lead-less minimold (M14, 1208 PKG)

<R>

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG3032M14

NESG3032M14-A

4-pin lead-less minimold 50 pcs

• 8 mm wide embossed taping

(M14, 1208 PKG)

(Pb-Free)

(Non reel)

10 kpcs/reel

• Pin 1 (Collector), Pin 4 (NC) face the

perforation side of the tape

NESG3032M14-T3 NESG3032M14-T3-A

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

12.0

Unit

4.3

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0048EJ0300 Rev.3.00

Sep 18, 2012

Page 1 of 13

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