Datasheet > NESG3031M14-A

NESG3031M14-A

更新时间： 2024-09-24 03:46:39

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管放大器
页数	文件大小	规格书
9页	548K
描述
NPN SiGe HIGH FREQUENCY TRANSISTOR

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中文翻译

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数据手册

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NESG3031M14-A 数据手册

NESG3031M14

DC CURRENT GAIN vs.

COLLECTOR CURRENT

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1,000

100

1,000

V^CE= 2 V

V^CE= 1 V

100

0.1

100

0.1

100

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

1,000

100

V^CE= 1 V

f = 2 GHz

V^CE= 3 V

0.1

Collector Current I^C(mA)

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

VCE = 3 V

VCE = 2 V

f = 2 GHz

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

1 2 345 6 7...9

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与NESG3031M14-A相关器件

型号	品牌	获取价格	描述	数据表
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NESG3031M14-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
NESG3031M14-T3	NEC	获取价格	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG3031M14-T3-A	CEL	获取价格	NPN SiGe HIGH FREQUENCY TRANSISTOR
NESG3031M14-T3-AFB	NEC	获取价格	暂无描述
NESG3031M14-T3-A-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
NESG3031M14-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
NESG3031M14-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
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