是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | LEADLESS MINIMOLD, M14, 4 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.61 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.035 A | 基于收集器的最大容量: | 0.25 pF |
集电极-发射极最大电压: | 4.3 V | 配置: | SINGLE |
最高频带: | C BAND | JESD-30 代码: | R-PDSO-F4 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON GERMANIUM | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NESG3031M14-T3-A | CEL | NPN SiGe HIGH FREQUENCY TRANSISTOR |
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NESG3031M14-T3-AFB | NEC | 暂无描述 |
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NESG3031M14-T3-A-FB | RENESAS | RF SMALL SIGNAL TRANSISTOR |
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NESG3031M14-T3FB | NEC | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN |
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NESG3031M14-T3FB-A | NEC | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN |
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NESG3032M14 | CEL | NPN SILICON GERMANIUM RF TRANSISTOR |
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