NESG3031M14-T3-AFB

更新时间： 2024-01-31 00:22:46

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日电电子 - NEC		/
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NESG3031M14-T3-AFB 数据手册

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PRELIMINARY DATA SHEET

NEC's NPN SiGe

HIGH FREQUENCY TRANSISTOR

NESG3031M14

FEATURES

•

LOW NOISE FIGURE AND HIGH-GAIN

NF= 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

NF= 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

•

MAXIMUM STABLE POWER GAIN:

MSG= 15.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz

SiGe HBT TECHNOLOGY:

USH3 process, fmax = 110 GHz

M14 PACKAGE:

4-pin lead-less minimold package

ORDERING INFORMATION

PART NUMBER

QUANTITY

SUPPLYING FORM

NESG3031M14

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape

NESG3031M14-T3

Remark To order evaluation samples, contact your nearby sales ofﬁce.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

VCEO

VEBO

12.0

4.3

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

T^j

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm, (t) glass epoxy PCB

California Eastern Laboratories

12 3

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