NESG3031M05-T1FB-A

更新时间： 2024-01-18 05:08:18

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
3页	102K
描述
暂无描述

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NESG3031M05-T1FB-A 数据手册

浏览型号NESG3031M05-T1FB-A的Datasheet PDF文件第2页

浏览型号NESG3031M05-T1FB-A的Datasheet PDF文件第3页

PRELIMINARY DATA SHEET

NEC's NPN SiGe

HIGH FREQUENCY TRANSISTOR

NESG3031M05

FEATURES

•

LOW NOISE FIGURE AND HIGH-GAIN

NF= 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

NF= 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

•

MAXIMUM STABLE POWER GAIN:

MSG= 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz

SiGe HBT TECHNOLOGY:

USH3 process, fmax = 110 GHz

M05 PACKAGE:

Flat-lead 4 pin thin-type super minimold package

ORDERING INFORMATION

PART NUMBER

QUANTITY

SUPPLYING FORM

NESG3031M05

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape

NESG3031M05-T1

Remark To order evaluation samples, contact your nearby sales ofﬁce.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

VCEO

VEBO

12.0

4.3

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

T^j

150

Tstg

−65 to +150

Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB

California Eastern Laboratories

12 3

下载PDF

与NESG3031M05-T1FB-A相关器件

型号	品牌	描述	获取价格	数据表
NESG3031M14	NEC	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR	获取价格
NESG3031M14	CEL	NPN SiGe HIGH FREQUENCY TRANSISTOR	获取价格
NESG3031M14-A	CEL	NPN SiGe HIGH FREQUENCY TRANSISTOR	获取价格
NESG3031M14-A	RENESAS	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, M14, LEAD-LESS MINIMOLD PACKAGE-4	获取价格
NESG3031M14-A-FB	NEC	暂无描述	获取价格
NESG3031M14-FB	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格