NESG3031M05-T1FB-A

更新时间： 2024-01-16 09:47:02

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
3页	102K
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浏览型号NESG3031M05-T1FB-A的Datasheet PDF文件第1页

NESG3031M05

ELECTRICAL CHARACHTERISTICS (TA = 25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC Characteristics

−

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I^CBO

VCB = 5 V, IE = 0 mA

100

380

−

IEBO

VEB = 1 V, IC = 0 mA

VCE = 2 V, IC = 6 mA

Note 1

h^FE

220

300

RF Characteristics

|S^21e|²

VCE = 3 V, IC = 20 mA, f = 5.8 GHz

6.0

8.5

−

Insertion Power Gain

Noise Figure (1)

−

VCE = 2 V, IC = 6 mA, f = 5.2 GHz,

ZS = ZSopt, ZL = ZLopt

0.95

−

Noise Figure (2)

G^a

V^CE= 2 V, IC = 6 mA, f = 5.8 GHz,

1.1

10.0

9.5

1.5

−

ZS = ZSopt, ZL = ZLopt

Associated Gain (1)

Associated Gain (2)

VCE = 2 V, IC = 6 mA, f = 5.2 GHz,

ZS = ZSopt, ZL = ZLopt

−

VCE = 2 V, IC = 6 mA, f = 5.8 GHz,

ZS = ZSopt, ZL = ZLopt

7.5

Note 2

−

11.0

−

Reverse Transfer Capacitance

Maximum Stable Power Gain

C^re

VCB = 2 V, IE = 0 mA, f = 1 MHz

0.15

14.0

13.0

0.25

−

MSG^{Note 3}

VCE = 3 V, IC = 20 mA, f = 5.8 GHz

−

Gain

dB Compression Output

PO (1 dB)

VCE = 3 V, IC (set) = 20 mA,

dBm

Power

f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt

−

3rd Order Intermodulation

OIP³

VCE = 3 V, IC (set) = 20 mA,

18.0

dBm

Distortion Output Intercept Point

f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

S21

3. MSG =

S12

hFE CLASSIFICATION

RANK

Marking

hFE Value

T1K

220 to 380

123

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