Datasheet > NESG3031M05-T1-A

NESG3031M05-T1-A

更新时间： 2024-01-18 21:05:42

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
9页	673K
描述
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

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NESG3031M05-T1-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-F4	针数：	4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.1	最大集电极电流 (IC)：	0.035 A
基于收集器的最大容量：	0.25 pF	集电极-发射极最大电压：	4.3 V
配置：	SINGLE	最高频带：	C BAND
JESD-30 代码：	R-PDSO-F4	JESD-609代码：	e6
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM	Base Number Matches：	1

NESG3031M05-T1-A 数据手册

NPN SILICON GERMANIUM RF TRANSISTOR

NESG3031M05

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

FEATURES

•

The device is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz

SiGe HBT technology (UHS3) adopted: fmax = 110 GHz

•

Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)

<R>

ORDERING INFORMATION

Part Number

Order Number

NESG3031M05-A

Package

Quantity

Supplying Form

NESG3031M05

Flat-lead 4-pin thin-type super 50 pcs

• 8 mm w ide embossed taping

minimold (M05, 2012 PKG)

(Pb-Free)

(Non reel) • Pin 3 (Collector), Pin 4 (Emitter) face the

perforation side of the tape

NESG3031M05-T1 NESG3031M05-T1-A

kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

12.0

Unit

4.3

1.5

C

Note

Total Pow er Dissipation

Junction Temperature

Storage Temperature

Ptot

150

Tstg

65 to +150

Note Mounted on 1.08 cm² 1.0 mm (t) glass epoxy PWB

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PU10414EJ04V0DS (4th edition)

Date Published December 2008 NS

The mark <R> show s major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find w hat:" field.

12 3 4 5 6 7...9

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