是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-F4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.1 | 最大集电极电流 (IC): | 0.035 A |
基于收集器的最大容量: | 0.25 pF | 集电极-发射极最大电压: | 4.3 V |
配置: | SINGLE | 最高频带: | C BAND |
JESD-30 代码: | R-PDSO-F4 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON GERMANIUM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NESG3031M05-T1-AFB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN | |
NESG3031M05-T1-AFB | RENESAS |
获取价格 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN | |
NESG3031M05-T1-A-FB | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR | |
NESG3031M05-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN | |
NESG3031M05-T1FB-A | NEC |
获取价格 |
暂无描述 | |
NESG3031M14 | NEC |
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NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR | |
NESG3031M14 | CEL |
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NPN SiGe HIGH FREQUENCY TRANSISTOR | |
NESG3031M14-A | CEL |
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NPN SiGe HIGH FREQUENCY TRANSISTOR | |
NESG3031M14-A | RENESAS |
获取价格 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, M14, LEAD-LESS MINIMOLD PACKAGE-4 | |
NESG3031M14-A-FB | NEC |
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暂无描述 |