Datasheet > NESG3031M05-T1

NESG3031M05-T1

更新时间： 2024-02-26 08:57:24

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
9页	309K
描述
NPN SILICON GERMANIUM RF TRANSISTOR

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技术参数
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NESG3031M05-T1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-F4	针数：	4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.1	最大集电极电流 (IC)：	0.035 A
基于收集器的最大容量：	0.25 pF	集电极-发射极最大电压：	4.3 V
配置：	SINGLE	最高频带：	C BAND
JESD-30 代码：	R-PDSO-F4	JESD-609代码：	e6
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM	Base Number Matches：	1

NESG3031M05-T1 数据手册

NPN SILICON GERMANIUM RF TRANSISTOR

NESG3031M05

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

FEATURES

•

The device is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP., G^a= 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

NF = 0.95 dB TYP., G^a= 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

NF = 1.1 dB TYP., G^a= 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

Maximum stable power gain: MSG = 14.0 dB TYP. @ V^CE= 3 V, IC = 20 mA, f = 5.8 GHz

SiGe HBT technology (UHS3) adopted: f^max= 110 GHz

•

Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG3031M05

NESG3031M05-A

Flat-lead 4-pin thin-type super

minimold (M05, 2012 PKG)

(Pb-Free)^Note

50 pcs

• 8 mm wide embossed taping

• Pin 3 (Collector), Pin 4 (Emitter) face the

perforation side of the tape

(Non reel)

NESG3031M05-T1 NESG3031M05-T1-A

3 kpcs/reel

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

12.0

Unit

4.3

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10414EJ03V0DS (3rd edition)

Date Published November 2005 CP(K)

The mark shows major revised points.

12 3 4 5 6 7...9

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与NESG3031M05-T1相关器件

型号	品牌	描述	获取价格	数据表
NESG3031M05-T1-A	RENESAS	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN	获取价格
NESG3031M05-T1-A	CEL	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SU	获取价格
NESG3031M05-T1-AFB	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格
NESG3031M05-T1-AFB	RENESAS	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN	获取价格
NESG3031M05-T1-A-FB	RENESAS	RF SMALL SIGNAL TRANSISTOR	获取价格
NESG3031M05-T1FB	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格

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