NEC's NPN SiGe RF TRANSISTOR
FOR MEDIUM OUTPUT POWER
AMPLIFICATION (1 W)
NESG260234
3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
•
THIS PRODUCT IS SUITABLE FOR
MEDIUM OUTPUT POWER (1 W) AMPLIFICATION
PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
PO = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
•
•
•
•
MAXIMUM STABLE GAIN:
MSG= 23 dB TYP @ VCE = 6 V, IC = 100 mA, f = 460 MHz
SiGe TECHNOLOGY:
UHS2-HV process
ABSOLUTE MAXIMUM RATINGS:
VCBO = 25 V
3-PIN POWER MINIMOLD (34 PACKAGE)
ORDERING INFORMATION
PART NUMBER
ORDER NUMBER
PACKAGE
QUANTITY
SUPPLYING FORM
NESG260234
NESG260234-AZ
3-pin power minimold 25 pcs (Non reel) • Magazine case
(Pb-Free)Note1
NESG260234-T1 NESG260234-T1-AZ
1 kpcs/reel
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
RATINGS
UNIT
25
9.2
V
V
2.8
V
IC
600
mA
W
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
1.9
Tj
150
Tstg
−65 to +150
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories