NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
•
•
Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG270034
Order Number
Package
Quantity
25 pcs
Supplying Form
NESG270034-AZ
3-pin power minimold
(34 PKG) (Pb-Free) Note1, (Non reel)
• Magazine case
2
NESG270034-T1 NESG270034-T1-AZ
1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
25
9.2
V
2.8
V
750
mA
W
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
1.9
Tj
150
°C
°C
Tstg
−65 to +150
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10577EJ01V0DS (1st edition)
Date Published September 2005 CP(K)
©
NEC Compound Semiconductor Devices, Ltd. 2005