Datasheet > NESG270034

NESG270034

更新时间： 2024-01-16 07:29:27

品牌	Logo	应用领域
CEL		晶体晶体管输出元件
页数	文件大小	规格书
11页	330K
描述
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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NESG270034 技术参数

NESG270034

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS

OUTPUT POWER, COLLECTOR

CURRENT, COLLECTOR EFFICIENCY

vs. INPUT POWER

1 000

800

600

400

200

CE = 6 V, f = 460 MHz

C (set) = 30 mA

out

Input Power Pin (dBm)

Remark The graph indicates nominal characteristics.

Preliminary Data Sheet PU10577EJ01V0DS

1 2 3 456 7 8...11

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型号	品牌	描述	获取价格	数据表
NESG270034-A	RENESAS	RF & Microwave device	获取价格
NESG270034-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-AZ-FB	RENESAS	TRANSISTOR RF POWER TRANSISTOR, BIP RF Power	获取价格
NESG270034-T1	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	RENESAS	暂无描述	获取价格