Datasheet > NESG270034

NESG270034

更新时间： 2024-01-05 04:09:45

品牌	Logo	应用领域
CEL		晶体晶体管输出元件
页数	文件大小	规格书
11页	330K
描述
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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NESG270034 技术参数

NESG270034

THERMAL RESISTANCE (TA = +25°C)

Parameter

Symbol

Ratings

Unit

Termal Resistance from Junction to

Ambient ^Note

Rthj-a

°C/W

Note Mounted on 34.2 cm²× 0.8 mm (t) glass epoxy PWB

RECOMMENDED OPERATING RANGE (TA = +25°C)

Parameter

Collector to Emitter Voltage

Collector Current

Symbol

VCE

MIN.

TYP.

6.0

MAX.

7.2

Unit

−

600

750

dBm

Input Power ^Note

Note Input power under conditions of V^CE≤ 6.0 V, f = 460 MHz

Preliminary Data Sheet PU10577EJ01V0DS

123 4 5 6 7...11

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型号	品牌	描述	获取价格	数据表
NESG270034-A	RENESAS	RF & Microwave device	获取价格
NESG270034-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-AZ-FB	RENESAS	TRANSISTOR RF POWER TRANSISTOR, BIP RF Power	获取价格
NESG270034-T1	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	RENESAS	暂无描述	获取价格