Datasheet > NESG270034

NESG270034

更新时间： 2024-01-24 16:15:11

品牌	Logo	应用领域
CEL		晶体晶体管输出元件
页数	文件大小	规格书
11页	330K
描述
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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NESG270034 技术参数

NESG270034

EVALUATION CIRCUIT (f = 460 MHz)

RF OUT

RF IN

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

EVALUATION BOARD (f = 460 MHz)

^CEGND

GND VBE

34-04

Notes

1. 38 × 38 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.

2. Back side: GND pattern

3. Solder gold plated on pattern

: Through holes

Preliminary Data Sheet PU10577EJ01V0DS

1...3 4 567 8 9...11

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型号	品牌	描述	获取价格	数据表
NESG270034-A	RENESAS	RF & Microwave device	获取价格
NESG270034-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-AZ-FB	RENESAS	TRANSISTOR RF POWER TRANSISTOR, BIP RF Power	获取价格
NESG270034-T1	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	RENESAS	暂无描述	获取价格