Datasheet > NESG270034

NESG270034

更新时间： 2024-02-11 08:24:42

品牌	Logo	应用领域
CEL		晶体晶体管输出元件
页数	文件大小	规格书
11页	330K
描述
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NESG270034 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

NESG270034 数据手册

NESG270034

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

ICBO

IEBO

VCB = 9.2 V, IE = 0 mA

−

µA

−

VEB = 1.0 V, IC = 0 mA

VCE = 3 V, IC = 100 mA

Note

hFE

120

180

RF Characteristics

Linner Gain (1)

V^CE= 6 V, IC (set) = 30 mA (RF OFF),

17.5

19.5

−

f = 460 MHz, Pⁱⁿ= 0 dBm

Linner Gain (2)

V^CE= 6 V, IC (set) = 30 mA (RF OFF),

f = 900 MHz, Pⁱⁿ= 0 dBm

G^L

Pout

ηC

−

31.5

−

33.5

31.5

−

dBm

V^CE= 6 V, IC (set) = 30 mA (RF OFF),

f = 460 MHz, Pⁱⁿ= 20 dBm

Output Power (1)

V^CE= 6 V, IC (set) = 30 mA (RF OFF),

f = 900 MHz, Pⁱⁿ= 20 dBm

Output Power (2)

VCE = 6 V, IC (set) = 30 mA (RF OFF),

f = 460 MHz, Pⁱⁿ= 20 dBm

Collector Efficiency (1)

Collector Efficiency (2)

−

VCE = 6 V, IC (set) = 30 mA (RF OFF),

f = 900 MHz, Pⁱⁿ= 25 dBm

ηC

−

Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

hFE CLASSIFICATION

Rank

Marking

hFE Value

80 to 180

Preliminary Data Sheet PU10577EJ01V0DS

1 234 5 6 7...11

下载PDF

与NESG270034相关器件

型号	品牌	描述	获取价格	数据表
NESG270034-A	RENESAS	RF & Microwave device	获取价格
NESG270034-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-AZ-FB	RENESAS	TRANSISTOR RF POWER TRANSISTOR, BIP RF Power	获取价格
NESG270034-T1	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	CEL	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3	获取价格
NESG270034-T1-AZ	RENESAS	暂无描述	获取价格