Datasheet > NESG250134-T1FB

NESG250134-T1FB

更新时间： 2024-01-15 22:32:57

品牌	Logo	应用领域
日电电子 - NEC		放大器晶体管
页数	文件大小	规格书
14页	154K
描述
UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3

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NESG250134-T1FB 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	MINIMOLD PACKAGE-3	Reach Compliance Code：	compliant
风险等级：	5.8	外壳连接：	EMITTER
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	4.5 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PSSO-F3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM	标称过渡频率 (fT)：	10000 MHz
Base Number Matches：	1

NESG250134-T1FB 数据手册

DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG250134

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)

3-PIN POWER MINIMOLD (34 PKG)

FEATURES

• This product is suitable for medium output power (800 mW) amplification

P^O= 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

P^O= 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz

•

MSG (Maximum Stable Gain) = 23 dB TYP., @ V^CE= 3.6 V, Ic = 100 mA, f = 460 MHz

Using UHS2-HV process (SiGe technology), V^CBO(ABSOLUTE MAXIMUM RATINGS) = 20 V

3-pin power minimold (34 PKG)

ORDERING INFORMATION

Part Number

NESG250134

Order Number

Package

Quantity

Supplying Form

NESG250134-AZ

3-pin power minimold 25 pcs

(Pb-Free)^{Note1, 2}

(Non reel)

• Magazine case

NESG250134-T1 NESG250134-T1-AZ

1 kpcs/reel • 12 mm wide embossed taping

• Pin 2 (Emitter) face the perforation side of the tape

Notes 1. Contains lead in the part except the electrode terminals.

2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

9.2

2.8

500

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

1.9

150

°C

Tstg

−65 to +150

Note Mounted on 34.2 cm²× 0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10422EJ03V0DS (3rd edition)

Date Published October 2004 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 2003, 2004

12 3 4 5 6 7...14

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与NESG250134-T1FB相关器件

型号	品牌	描述	获取价格	数据表
NESG250134-T1FB-A	NEC	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
NESG250134-T1-FB-AZ	RENESAS	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3	获取价格
NESG260234	NEC	3-PIN POWER MINIMOLD	获取价格
NESG260234	CEL	NPN SILICON GERMANIUM RF TRANSISTOR	获取价格
NESG260234-A	RENESAS	RF & Microwave device	获取价格
NESG260234-AZ	NEC	暂无描述	获取价格

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