是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.17 | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 7.2 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NESG260234-T1-AZ | NEC | 暂无描述 |
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NESG260234-T1FB-AZ | NEC | 暂无描述 |
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NESG270034 | CEL | NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3 |
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NESG270034-A | RENESAS | RF & Microwave device |
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NESG270034-AZ | CEL | NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (3 |
获取价格 |
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NESG270034-AZ-FB | RENESAS | TRANSISTOR RF POWER TRANSISTOR, BIP RF Power |
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