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NESG260234 PDF预览

NESG260234

更新时间: 2024-02-06 00:51:36
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管放大器
页数 文件大小 规格书
4页 254K
描述
3-PIN POWER MINIMOLD

NESG260234 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:7.2 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NESG260234 数据手册

 浏览型号NESG260234的Datasheet PDF文件第2页浏览型号NESG260234的Datasheet PDF文件第3页浏览型号NESG260234的Datasheet PDF文件第4页 
NEC's NPN SiGe RF TRANSISTOR  
FOR MEDIUM OUTPUT POWER  
AMPLIFICATION (1 W)  
NESG260234  
3-PIN POWER MINIMOLD (34 PACKAGE)  
FEATURES  
THIS PRODUCT IS SUITABLE FOR  
MEDIUM OUTPUT POWER (1 W) AMPLIFICATION  
PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz  
PO = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz  
MAXIMUM STABLE GAIN:  
MSG= 23 dB TYP @ VCE = 6 V, IC = 100 mA, f = 460 MHz  
SiGe TECHNOLOGY:  
UHS2-HV process  
ABSOLUTE MAXIMUM RATINGS:  
VCBO = 25 V  
3-PIN POWER MINIMOLD (34 PACKAGE)  
ORDERING INFORMATION  
PART NUMBER  
ORDER NUMBER  
PACKAGE  
QUANTITY  
SUPPLYING FORM  
NESG260234  
NESG260234-AZ  
3-pin power minimold 25 pcs (Non reel) • Magazine case  
(Pb-Free)Note1  
NESG260234-T1 NESG260234-T1-AZ  
1 kpcs/reel  
• 12 mm wide embossed taping  
• Pin 2 (Emitter) face the perforation side of the tape  
Notes 1. Contains Lead in the part except the electrode terminals.  
Remark To order evaluation samples, contact your nearby sales office.  
Unit sample quantity is 25 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)  
PARAMETER  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
RATINGS  
UNIT  
25  
9.2  
V
V
2.8  
V
IC  
600  
mA  
W
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
1.9  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
California Eastern Laboratories  

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