生命周期: | Contact Manufacturer | 包装说明: | CASE 37, 4 PIN |
针数: | 4 | Reach Compliance Code: | compliant |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.7 |
其他特性: | LOW NOISE | 配置: | SINGLE |
最大漏极电流 (ID): | 0.04 A | FET 技术: | METAL SEMICONDUCTOR |
最大反馈电容 (Crss): | 0.03 pF | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | O-CRDB-F4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DUAL GATE, DEPLETION MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 16 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NE25137L | CEL | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
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NE25137N | CEL | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
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NE25139 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139 | CEL | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
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|
NE25139-T1 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139T1U71 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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