生命周期: | Obsolete | 包装说明: | SOT-143, 4 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 13 V | FET 技术: | METAL SEMICONDUCTOR |
最大反馈电容 (Crss): | 0.03 pF | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 16 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NE25139U74 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139U74 | CEL | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
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NE25337 | NEC | GENERAL PURPOSE DUAL-GATE GaAs MESFET |
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NE25337-L | RENESAS | RF SMALL SIGNAL, FET |
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NE25337-N | RENESAS | RF SMALL SIGNAL, FET |
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NE25339 | NEC | GENERAL PURPOSE DUAL-GATE GaAs MESFET |
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