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NE25339T1U78 PDF预览

NE25339T1U78

更新时间: 2024-02-13 12:26:43
品牌 Logo 应用领域
CEL 放大器光电二极管晶体管
页数 文件大小 规格书
6页 100K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

NE25339T1U78 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:10 V
最大漏极电流 (ID):0.05 AFET 技术:METAL SEMICONDUCTOR
最大反馈电容 (Crss):0.035 pF最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):16 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

NE25339T1U78 数据手册

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