Datasheet > 晶体管 > 射频小信号场效应晶体管> NE25339-T1

NE25339-T1

更新时间： 2024-02-18 06:51:06

品牌	Logo	应用领域
日电电子 - NEC		栅
页数	文件大小	规格书
6页	51K
描述
GENERAL PURPOSE DUAL-GATE GaAs MESFET

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技术参数
数据手册

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NE25339-T1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.84
其他特性：	LOW NOISE	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	10 V
最大漏极电流 (ID)：	0.08 A	FET 技术：	METAL SEMICONDUCTOR
最大反馈电容 (Crss)：	0.035 pF	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G4	元件数量：	1
端子数量：	4	工作模式：	DUAL GATE, DEPLETION MODE
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	16 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

NE25339-T1 数据手册

GENERAL PURPOSE

DUAL-GATE GaAs MESFET

NE25339

POWER GAIN AND NOISE FIGURE vs.

FEATURES

DRAIN TO SOURCE VOLTAGE

VGS = 1 V, IDS = 10 mA, f = 900 MHz

•

SUITABLE FOR USE AS RF AMPLIFIER AND

MIXER IN UHF APPLICATIONS

•

LOW CRSS: 0.02 pF (TYP)

HIGH GPS: 20 dB (TYP) AT 900 MHz

LOW NF: 1.1 dB TYP AT 900 MHz

• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm

•

ION IMPLANTATION

AVAILABLE IN TAPE & REEL OR BULK

DESCRIPTION

Drain to Source Voltage, VDS (V)

The NE253 is an 800 µm dual gate GaAs FET designed to

provide flexibility in its application as a mixer, AGC amplifier,

or low noise amplifier. As an example, by shorting the second

gatetothesource, highergaincanberealizedthanwithsingle

gate MESFETs. This device is available in a mini-mold (sur-

face mount) package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE25339

SYMBOL

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 900 MHz

1.1

2.5

GPS

Power Gain at VDS = 5 V, VG2S = 1 V, IDS = 10 mA,

f = 900 MHz

BVDSX

Drain to Source Breakdown Voltage at VG1S = -4 V,

VG2S = 0, IDS = 20 µA

IDSS

Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V

VG1S (OFF)

Gate 1 to Source Cutoff Voltage at VDS = 5 V,

VG2S = 0 V, ID = 100 µA

-3.5

VG2S (OFF)

Gate 2 to Source Cutoff Voltage at VDS = 5 V,

VG1S = 0 V, ID = 100 µA

-3.5

IG1SS

IG2SS

|YFS|

Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0

Gate 2 Reverse Current at VDS = 0. VG2S = -4V, VG1S = 0

µA

Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,

IDS = 10 mA, f = 1.0 kHz

1.5

CISS

Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 1 MHz

1.0

2.0

CRSS

Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,

IDS = 10 mA, f = 1 MHz

0.02

0.035

California Eastern Laboratories

12 3 4 5 6

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NE25339T1U76	NEC	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars	获取价格
NE25339T1U76	CEL	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars	获取价格
NE25339T1U77	NEC	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars	获取价格
NE25339T1U77	CEL	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars	获取价格
NE25339T1U78	CEL	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars	获取价格
NE25339T2U76	CEL	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars	获取价格

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